MUR1040CT features * glass passivated chip * superfast switching time for high efficiency * lo w forward voltage drop and high current capability * low reverse leakage current * high surge capacity mechanical data * case: to-220ab molded plastic * polarity: as marked on the body * weight: 0.08 ounces, 2.24 grams * mounting position: any dim. a b c d e f g h j k m n q r milimeter min. max. 12.70 13.97 14.73 16.00 9.91 10.66 3.54 4.08 5.85 6.85 2.54 3.18 1.15 1.65 2.79 5.84 0.64 1.01 2.54 bsc 4.32 4.82 1.14 1.39 0.35 0.56 2.29 2.79 inches min. max. 0.500 0.550 0.580 0.630 0.390 0.420 0.139 0.161 0.230 0.270 0.100 0.125 0.045 0.065 0.110 0.230 0.025 0.040 0.100 bsc 0.170 0.190 0.045 0.055 0.014 0.022 0.090 0.110 dimensions to-220ab MUR1040CT v rrm v 400 v rms v 280 v dc v 400 a=anode, c=cathode, tab=cathode symbol characteristics i (av) maximum average forward rectified current @t c =125 c i fsm non repetitive peak forward surge current per diode sinusoidal (jedec method) t p =10ms t p =8.3ms maximum forward voltage pulse width=300us duty cycle i f =5a @t j =25 c i f =5a @t j =125 c i f =10a @t j =25 c i f =10a @t j =125 c v f i r maximum dc reverse current at rated dc blocking voltage @t j =25 c @t j =100 c c j typical junction capacitance per element (note 1) t rr maximum reverse recovery time (note 2) typical thermal resistance t j , t stg operating and storage temperature range maximum ratings 10 50 55 1.30 1.20 1.50 1.40 10 250 80 35 4.0 -55 to +150 a a v unit ua pf ns o o o o o o r ojc c/w o c o notes: 1. measured at 1.0mhz and applied reverse voltage of 4.0v dc. 2. reverse recovery test conditions: i f =0.5a, i r =1.0a, i rr =0.25a. a a c c(tab) a c a o ultra fast recovery diodes * rohs complian t p1 ?2008 sirectifier electronics technology corp. all rights reserved www.sirectifier.com
MUR1040CT f ig.5 - t ypical junct i o n capacit ance ca pa cit a n c e , ( p f ) re ve rs e vo l t a g e , v o l t s 10 1 10 0 1000 10 0 10 0. 1 f i g . 1 - f o r w ar d cu rr e n t de r a t i ng c u r v e avera g e f o r w a r d c u r r e n t a m p e r e s 25 75 100 1 2 5 1 50 4 0 50 12 17 5 10 0 8 s i ng l e ph as e ha l f w ave 6 0 h z r e s i s t iv e or ind u c t iv e lo a d ca se t e m p er a t ur e , c 2 6 f ig.2 - ma x i mum no n - re p e t i t i v e s u r g e cu r r e n t n u m b e r of cy cl es a t 60 hz p e a k f o r w ard s u r g e current , am peres 1 5 10 50 10 0 2 20 0 10 20 30 40 50 60 s i n g le h a lf - s i n e - w a v e (je d e c m e t h od ) t p =1 0 m s t p =8 . 3 m s i n st a n t a neo u s f o rw ard vo l t a g e , vo l t s f ig.4 - t y p i ca l f o r w a r d c h a r a c t e r i s t ic s i n s t a n t a neous f o rw ard c u r r e n t ,( a ) 0. 2 0 . 4 1. 2 1. 4 1. 0 10 100 0. 6 0 . 8 1 . 0 0. 1 1. 8 1. 6 p u ls e w i d t h 3 0 0u a i n st a n t a neo u s f o rw ard vo l t a g e , vo l t s 0 1. 0 10 100 0. 1 p u ls e w i d t h 3 0 0u s 2 % d u ty c y c l e t j = 2 5 c t j = 1 2 5 c 4 t j = 25 c , f = 1mh z p e r c e n t o f r a t e d peak r e v e rse v o l t ag e, ( % ) f ig.3 - t y p i c a l rever s e cha r a c t eris t i cs in st an t a n e o u s re v e rs e c u r r e n t ,(u a ) 20 14 0 0 .0 0 1 0. 1 1. 0 10 0 . 0 10 . 0 60 1 0 0 t j = 1 0 0 c 0. 01 t j = 2 5 c t j = 7 5 c ultra fast recovery diodes p2 ?2008 sirectifier electronics technology corp. all rights reserved www.sirectifier.com
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